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Reversible control of doping in graphene-on-SiO2 by cooling under gate-voltage.
- Source :
- Journal of Applied Physics; 11/21/2017, Vol. 122 Issue 19, p1-6, 6p, 5 Graphs
- Publication Year :
- 2017
-
Abstract
- The electronic properties of graphene can be modulated by various doping techniques other than back-gate, but most such methods are not easily reversible and also lead to mobility reduction. Here, we report on the reversible control of doping in graphene by cooling under back-gate-voltage. The observed variation in hysteresis in our devices with the temperature and interface preparation method is attributed to the variation in the density of redox species, namely, H<subscript>2</subscript>O and O<subscript>2</subscript>, at the graphene/SiO<subscript>2</subscript> interface, and their diffusion. With careful interface preparation, we have been able to make devices with negligible hysteresis at room temperature and by exploiting hysteresis at high temperatures, we get a wide, but reversible tunability of interface charge density and graphene doping, by cooling to room temperature under gate-voltage. Such reversible control of graphene doping by manipulating the interface defect charge density can help in making new data storage devices using graphene. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 122
- Issue :
- 19
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 126401870
- Full Text :
- https://doi.org/10.1063/1.4998643