Junctionless tri-gate InGaAs MOSFETs.

We demonstrate and characterize junctionless tri-gate InGaAs MOSFETs, fabricated using a simplified process with gate lengths down to L_g = 25 nm at a nanowire dimension of 7 × 16 nm². These devices use a single 7-nm-thick In_0.80Ga_0.20As (N_D = 1 × 10¹⁹ cm⁻³) layer as both channel and contacts. The devices show SS_sat = 76 mV/dec, peak g_m = 1.6 mS/µm and I_ON = 160 µA/µm (at I_OFF = 100 nA/µm and V_DD = 0.5 V), the latter which is the highest reported value for a junctionless FET. We also show that device performance is mainly limited by high parasitic access resistance due to the narrow and thin contact layer. [ABSTRACT FROM AUTHOR]