Capacitance characterization of GaP/n-Si structures grown by PE-ALD.

Details

Language :

English

ISSN :

17426588

Volume :

917

Issue :

5

Database :

Complementary Index

Journal :

Journal of Physics: Conference Series

Publication Type :

Academic Journal

Accession number :

126394310

Full Text :

https://doi.org/10.1088/1742-6596/917/5/052027