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High performance top-gated multilayer WSe2 field effect transistors.
- Source :
- Nanotechnology; 11/24/2017, Vol. 28 Issue 47, p1-1, 1p
- Publication Year :
- 2017
-
Abstract
- In this paper, high performance top-gated WSe<subscript>2</subscript> field effect transistor (FET) devices are demonstrated via a two-step remote plasma assisted ALD process. High-quality, low-leakage aluminum oxide (Al<subscript>2</subscript>O<subscript>3</subscript>) gate dielectric layers are deposited onto the WSe<subscript>2</subscript> channel using a remote plasma assisted ALD process with an ultrathin (∼1 nm) titanium buffer layer. The first few nanometers (∼2 nm) of the Al<subscript>2</subscript>O<subscript>3</subscript> dielectric film is deposited at relatively low temperature (i.e. 50 °C) and remainder of the film is deposited at 150 °C to ensure the conformal coating of Al<subscript>2</subscript>O<subscript>3</subscript> on the WSe<subscript>2</subscript> surface. Additionally, an ultra-thin titanium buffer layer is introduced at the WSe<subscript>2</subscript> channel surface prior to ALD process to mitigate oxygen plasma induced doping effects. Excellent device characteristics with current on–off ratio in excess of 10<superscript>6</superscript> and a field effect mobility as high as 70.1 cm<superscript>2</superscript> V<superscript>–1</superscript> s<superscript>–1</superscript> are achieved in a few-layer WSe<subscript>2</subscript> FET device with a 30 nm Al<subscript>2</subscript>O<subscript>3</subscript> top-gate dielectric. With further investigation and careful optimization, this method can play an important role for the realization of high performance top gated FETs for future optoelectronic device applications. [ABSTRACT FROM AUTHOR]
- Subjects :
- FIELD-effect transistors
ALUMINUM oxide
OPTOELECTRONIC devices
Subjects
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 28
- Issue :
- 47
- Database :
- Complementary Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 126012417
- Full Text :
- https://doi.org/10.1088/1361-6528/aa8081