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Study of the Effect of Annealing on the Properties of Mn2RuxGa Thin Films.
- Source :
- IEEE Transactions on Magnetics; Nov2017, Vol. 53 Issue 11, p1-5, 5p
- Publication Year :
- 2017
-
Abstract
- The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 °C to 400 °C is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular magnetic anisotropy due to a small ~ 1% tetragonal elongation induced by the substrate strain. The main change on annealing is a modification in the compensation temperature T\text {comp} , which first increases from 50 K for the as-deposited film to 185 K after annealing at 250 °C, and then falls to 140 K after annealing at 400 °C. There are minor changes in the atomic order, coercivity, resistivity, and anomalous Hall effect (AHE), but the net magnetization measured by SQUID magnetometry with the field applied in-plane or perpendicular-to-the-plane changes more significantly. It saturates at 20 –30 kA \cdot ~\textm^-1 at room temperature, and a small soft component is seen in the perpendicular SQUID loops, which is absent in the square AHE hysteresis loops. This is explained by the half-metallic nature of the compound; the AHE probes only the 4c Mn sublattice that provides the spin-polarized electrons at the Fermi level, whereas the SQUID measures the sum of the oppositely aligned 4c and 4a sublattice magnetizations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189464
- Volume :
- 53
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Magnetics
- Publication Type :
- Academic Journal
- Accession number :
- 125953926
- Full Text :
- https://doi.org/10.1109/TMAG.2017.2704778