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Growth and characterization of BaZnGa.

Authors :
Jo, Na Hyun
Lin, Qisheng
Nguyen, Manh Cuong
Kaluarachchi, Udhara S.
Meier, William R.
Manni, Soham
Downing, Savannah S.
Böhmer, Anna E.
Kong, Tai
Sun, Yang
Taufour, Valentin
Wang, Cai-Zhuang
Ho, Kai-Ming
Bud’ko, Sergey L.
Canfield, Paul C.
Source :
Philosophical Magazine; Dec2017, Vol. 97 Issue 35, p3317-3324, 8p
Publication Year :
2017

Abstract

We report the growth, structure and characterization of BaZnGa, identifying it as the sole known ternary compound in the Ba–Zn–Ga system. Single crystals of BaZnGa can be grown out of excess Ba–Zn and adopt a tI36 structure type. There are three unique Ba sites and three M = Zn/Ga sites. Using DFT calculations we can argue that whereas one of these three M sites is probably solely occupied by Ga, the other two M sites, most likely, have mixed Zn/Ga occupancy. Temperature-dependent resistivity and magnetization measurements suggest that BaZnGa is a poor metal with no electronic or magnetic phase transitions between 1.8 and 300 K. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
14786435
Volume :
97
Issue :
35
Database :
Complementary Index
Journal :
Philosophical Magazine
Publication Type :
Academic Journal
Accession number :
125941398
Full Text :
https://doi.org/10.1080/14786435.2017.1380861