Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs.

MLA

Gupta, Chirag, et al. “Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs.” IEEE Electron Device Letters, vol. 38, no. 11, Nov. 2017, pp. 1559–62. EBSCOhost, https://doi.org/10.1109/LED.2017.2749540.

APA

Gupta, C., Ji, D., Chan, S. H., Agarwal, A., Leach, W., Keller, S., Chowdhury, S., & Mishra, U. K. (2017). Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs. IEEE Electron Device Letters, 38(11), 1559–1562. https://doi.org/10.1109/LED.2017.2749540

Chicago

Gupta, Chirag, Dong Ji, Silvia H. Chan, Anchal Agarwal, William Leach, Stacia Keller, Srabanti Chowdhury, and Umesh K. Mishra. 2017. “Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs.” IEEE Electron Device Letters 38 (11): 1559–62. doi:10.1109/LED.2017.2749540.