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Flexoelectric behavior in PIN-PMN-PT single crystals over a wide temperature range.

Authors :
Longlong Shu
Tao Li
Zhiguo Wang
Fei Li
Linfeng Fei
Zhenggang Rao
Mao Ye
Shanming Ke
Wenbin Huang
Yu Wang
Xi Yao
Source :
Applied Physics Letters; 10/16/2017, Vol. 111 Issue 16, p162901-1-162901-5, 5p, 1 Diagram, 4 Graphs
Publication Year :
2017

Abstract

Flexoelectricity couples strain gradient to polarization and usually exhibits a large coefficient in the paraelectric phase of the ferroelectric perovskites. In this study, we employed the relaxor 0.3Pb(In<subscript>1/2</subscript>Nb<subscript>1/2</subscript>)O<subscript>3</subscript>-0.35Pb(Mg<subscript>1/3</subscript>Nb<subscript>2/3</subscript>)O<subscript>3</subscript>-0.35PbTiO<subscript>3</subscript> (PIN-PMN-PT) single crystals to study the relationship between flexoelectric coefficients and the crystal structure. The flexoelectric coefficients in PIN-PMN-PT single crystal are found to vary from 57 μC/m at orthorhombic/monoclinic phase to 135 μC/m at tetragonal phase, and decreases to less than 27 μC/m in the temperature above T<subscript>m</subscript>. This result discloses that ferroelectricity can significantly enhance the flexoelectricity in this kind of perovskite. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
111
Issue :
16
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
125804320
Full Text :
https://doi.org/10.1063/1.5001265