Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers.

MLA

Kaess, Felix, et al. “Defect Quasi Fermi Level Control-Based CN Reduction in GaN: Evidence for the Role of Minority Carriers.” Applied Physics Letters, vol. 111, no. 15, Oct. 2017, pp. 152101-1-152101–05. EBSCOhost, https://doi.org/10.1063/1.5000720.

APA

Kaess, F., Collazo, R., Reddy, P., Sitar, Z., Tweedie, J., Kirste, R., & Mita, S. (2017). Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers. Applied Physics Letters, 111(15), 152101-1-152101–152105. https://doi.org/10.1063/1.5000720

Chicago

Kaess, Felix, Ramon Collazo, Pramod Reddy, Zlatko Sitar, James Tweedie, Ronny Kirste, and Seiji Mita. 2017. “Defect Quasi Fermi Level Control-Based CN Reduction in GaN: Evidence for the Role of Minority Carriers.” Applied Physics Letters 111 (15): 152101-1-152101–5. doi:10.1063/1.5000720.