Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au.

Authors :: Carey IV, Patrick H.
Jiancheng Yang
Ren, F.
Hays, David C.
Pearton, S. J.
Soohwan Jang
Akito Kuramata
Kravchenko, Ivan I.
Source :: AIP Advances; 2017, Vol. 7 Issue 9, p095313-1-095313-6, 6p, 5 Graphs
Publication Year :: 2017
Abstract: AZO interlayers between n-Ga<subscript>2</subscript>O<subscript>3</subscript> and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at 300°C.Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga<subscript>2</subscript>O<subscript>3</subscript> stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 -mm and 2.82×10<superscript>-5</superscript> Ω-cm<superscript>2</superscript> were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga<subscript>2</subscript>O<subscript>3</subscript> is 0.79 eV and provides a favorable pathway for improved electron transport across this interface. [ABSTRACT FROM AUTHOR]