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Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure.
- Source :
- Semiconductor Science & Technology; Oct2017, Vol. 32 Issue 10, p1-1, 1p
- Publication Year :
- 2017
-
Abstract
- InAs/GaSb coupled quantum well heterostructures are important semiconductor systems with applications ranging from spintronics to photonics. Most recently, InAs/GaSb heterostructures have been identified as candidate two-dimensional topological insulators, predicted to exhibit helical edge conduction via fully spin-polarised carriers. We study an InAs/GaSb double quantum well heterostructure with an AlSb barrier to decouple partially the 2D electrons and holes, and find conduction consistent with a 2D hole gas, with an effective mass of 0.235 ± 0.005 m<subscript>0</subscript>, existing simultaneously with hybridised carriers with an effective mass of 0.070 ± 0.005 m<subscript>0</subscript>, where m<subscript>0</subscript> is the bare electron mass. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 32
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 125386400
- Full Text :
- https://doi.org/10.1088/1361-6641/aa827e