Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process.

MLA

D González, et al. “Quantitative Analysis of the Interplay between InAs Quantum Dots and Wetting Layer during the GaAs Capping Process.” Nanotechnology, vol. 28, no. 42, Oct. 2017, p. 1. EBSCOhost, https://doi.org/10.1088/1361-6528/aa83e2.

APA

D González, V Braza, A D Utrilla, A Gonzalo, D F Reyes, T Ben, A Guzman, A Hierro, & J M Ulloa. (2017). Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process. Nanotechnology, 28(42), 1. https://doi.org/10.1088/1361-6528/aa83e2

Chicago

D González, V Braza, A D Utrilla, A Gonzalo, D F Reyes, T Ben, A Guzman, A Hierro, and J M Ulloa. 2017. “Quantitative Analysis of the Interplay between InAs Quantum Dots and Wetting Layer during the GaAs Capping Process.” Nanotechnology 28 (42): 1. doi:10.1088/1361-6528/aa83e2.