A novel theoretical model for the temperature dependence of band gap energy in semiconductors.

MLA

Peiji Geng, et al. “A Novel Theoretical Model for the Temperature Dependence of Band Gap Energy in Semiconductors.” Journal of Physics D: Applied Physics, vol. 50, no. 40, Oct. 2017, p. 1. EBSCOhost, https://doi.org/10.1088/1361-6463/aa85ad.

APA

Peiji Geng, Weiguo Li, Xianhe Zhang, Xuyao Zhang, Yong Deng, & Haibo Kou. (2017). A novel theoretical model for the temperature dependence of band gap energy in semiconductors. Journal of Physics D: Applied Physics, 50(40), 1. https://doi.org/10.1088/1361-6463/aa85ad

Chicago

Peiji Geng, Weiguo Li, Xianhe Zhang, Xuyao Zhang, Yong Deng, and Haibo Kou. 2017. “A Novel Theoretical Model for the Temperature Dependence of Band Gap Energy in Semiconductors.” Journal of Physics D: Applied Physics 50 (40): 1. doi:10.1088/1361-6463/aa85ad.