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Total Dose Hardness Assurance Testing Using Laboratory Radiation Sources.
- Source :
- IEEE Transactions on Nuclear Science; Dec2003 Part 1 of 2, Vol. 50 Issue 6, p2310-2315, 6p
- Publication Year :
- 2003
-
Abstract
- NMOS transistors were irradiated using X-ray, Co-60 gamma, electron, and proton radiation sources. The charge yield was estimated for protons of different energies and electrons, and compared with values obtained for X-ray and Co-60 irradiations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 50
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 12517485
- Full Text :
- https://doi.org/10.1109/TNS.2003.821392