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Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation.
- Source :
- IEEE Electron Device Letters; Aug2017, Vol. 38 Issue 8, p1097-1100, 4p
- Publication Year :
- 2017
-
Abstract
- This letter demonstrates vertical GaN junction barrier Schottky (JBS) rectifiers fabricated with novel ion implantation techniques. We used two different methods to form the lateral p-n grids below the Schottky contact: 1) Mg implantation into n-GaN to form p-wells and 2) Si implantation into p-GaN to form n-wells. Specific differential ON-resistances ( R \mathrm{\scriptscriptstyle ON} ) of 1.5–2.5 \textm\Omega ~\cdot cm2 and 7–9 \textm\Omega ~\cdot cm2 were obtained in the Mg-implanted and Si-implanted JBS rectifiers, respectively. A breakdown voltage of 500–600 V was achieved in both devices, with a leakage current at high reverse biases at least 100-fold lower than conventional vertical GaN Schottky barrier diodes. The impact of n-well and p-well widths on the R \mathrm{\scriptscriptstyle ON} and BV was investigated. Fast switching capability was also demonstrated. This letter shows the feasibility of forming patterned p-n junctions by novel ion implantation techniques, to enable high-performance vertical GaN power devices. [ABSTRACT FROM AUTHOR]
- Subjects :
- SCHOTTKY barrier diodes
ION implantation
ELECTRIC current rectifiers
Subjects
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 38
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 124331347
- Full Text :
- https://doi.org/10.1109/LED.2017.2720689