Interdigitated back contact solar cells with polycrystalline silicon on oxide passivating contacts for both polarities.

We demonstrate an independently confirmed 25.0%-efficient interdigitated back contact silicon solar cell with passivating polycrystalline silicon (poly-Si) on oxide (POLO) contacts that enable a high open circuit voltage of 723 mV. We use n-type POLO contacts with a measured saturation current density of J_0n = 4 fA cm⁻² and p-type POLO contacts with J_0p = 10 fA cm⁻². The textured front side and the gaps between the POLO contacts on the rear are passivated by aluminum oxide (AlO_x) with J_0AlOx = 6 fA cm⁻² as measured after deposition. We analyze the recombination characteristics of our solar cells at different process steps using spatially resolved injection-dependent carrier lifetimes measured by infrared lifetime mapping. The implied pseudo-efficiency of the unmasked cell, i.e., cell and perimeter region are illuminated during measurement, is 26.2% before contact opening, 26.0% after contact opening and 25.7% for the finished cell. This reduction is due to an increase in the saturation current density of the AlO_x passivation during chemical etching of the contact openings and of the rear side metallization. The difference between the implied pseudo-efficiency and the actual efficiency of 25.0% as determined by designated-area light current–voltage (I–V) measurements is due to series resistance and diffusion of excess carriers into the non-illuminated perimeter region. [ABSTRACT FROM AUTHOR]