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Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T′-MoS2 on Graphene for Enhanced Photoresponse.
- Source :
- Advanced Electronic Materials; Jul2017, Vol. 3 Issue 7, pn/a-N.PAG, 8p
- Publication Year :
- 2017
-
Abstract
- Recently the applications of 2D materials have been broadened by engineering their mechanical, electronic, and optical properties through either lateral or vertical hybridization. Here, the successful design and fabrication of a novel triphasic 2D material by vertically stacking lateral 2H-/1T′-molybdenum disulfide (MoS<subscript>2</subscript>) heterostructures on graphene with the assistance of supercritical carbon dioxide is reported. This triphasic structure is experimentally shown to significantly enhance the photocurrent densities for hydrogen evolution reactions. First-principles theoretical analyses reveal that the improved photoresponse should be ascribed to the beneficial band alignments of the triphasic heterostructure. More specifically, electrons can efficiently hop to the 1T′-MoS<subscript>2</subscript> phase via the highly conductive graphene layer as a result of their strong vertical interfacial electronic coupling. Subsequently, the electrons acquired on the 1T′-MoS<subscript>2</subscript> phase are exploited to fill the photoholes on the photoexcited 2H-MoS<subscript>2</subscript> phase through the lateral heterojunction structure, thereby suppressing the recombination process of the photoinduced charge carriers on the 2H-MoS<subscript>2</subscript> phase. This novel triphasic concept promises to open a new avenue to widen the molecular design of 2D hybrid materials for photonics-based energy conversion applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 2199160X
- Volume :
- 3
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Advanced Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 124061884
- Full Text :
- https://doi.org/10.1002/aelm.201700024