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Spin Hall magnetoresistance in an antiferromagnetic magnetoelectric Cr2O3/heavy-metal W heterostructure.
- Source :
- Applied Physics Letters; 6/26/2017, Vol. 110 Issue 26, p1-4, 4p
- Publication Year :
- 2017
-
Abstract
- The spin Hall magnetoresistance (SMR) effect is studied in a magnetoelectric Cr<subscript>2</subscript>O<subscript>3</subscript>/heavy-metal W heterostructure. The Cr<subscript>2</subscript>O<subscript>3</subscript> film is confirmed as the α-phase, and its Néel temperature is determined. A clear SMR behavior is observed at the interface of Cr<subscript>2</subscript>O<subscript>3</subscript>/W. A nearly 0.1% SMR ratio is achieved under a magnetic field of 9 T, which is larger than the reported value in the SrMnO<subscript>3</subscript>/Pt structure. A systematic study on the variations of SMR as functions of the magnetic field and its angle is performed. Our results indicate that the antiferromagnetic magnetoelectric Cr<subscript>2</subscript>O<subscript>3</subscript>/W structure has a promising prospect application in future spintronic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 110
- Issue :
- 26
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 123872197
- Full Text :
- https://doi.org/10.1063/1.4989680