Analysis of Clockwise and Counter-Clockwise Hysteresis Characteristics in 3-D NAND Flash Memory Cells.

MLA

Kang, Ho-Jung, et al. “Analysis of Clockwise and Counter-Clockwise Hysteresis Characteristics in 3-D NAND Flash Memory Cells.” IEEE Electron Device Letters, vol. 38, no. 7, July 2017, pp. 867–70. EBSCOhost, https://doi.org/10.1109/LED.2017.2705721.

APA

Kang, H.-J., Choi, N., Bae, J.-H., Park, B.-G., & Lee, J.-H. (2017). Analysis of Clockwise and Counter-Clockwise Hysteresis Characteristics in 3-D NAND Flash Memory Cells. IEEE Electron Device Letters, 38(7), 867–870. https://doi.org/10.1109/LED.2017.2705721

Chicago

Kang, Ho-Jung, Nagyong Choi, Jong-Ho Bae, Byung-Gook Park, and Jong-Ho Lee. 2017. “Analysis of Clockwise and Counter-Clockwise Hysteresis Characteristics in 3-D NAND Flash Memory Cells.” IEEE Electron Device Letters 38 (7): 867–70. doi:10.1109/LED.2017.2705721.