Record Effective Mobility Obtained From In0.53Ga0.47As/In0.52Al0.48As Quantum-Well MOSFETs on 300-mm Si Substrate.

In this letter, we have investigated the properties of In0.53Ga0.47As quantum-well (QW) metal–oxide–semiconductor field-effect-transistors (MOSFETs) on a 300-mm(100) Si wafer. We have explored the impact of scaling down In0.53Ga0.47As channel thickness ( \textt\mathrm {ch}) from 15 to 5 nm. The fabricated devices show excellent electrostatic integrity, such as subthreshold-swing (SS) < 80 mV/decade and drain-induced barrier-lower (DIBL) <20 mV/V. Furthermore, we have extracted the effective mobility ( \mu \textit {n\_{}$eff}}) of the fabricated devices to investigate the carrier transport properties of the InGaAs MOSFETs with different values of \textt\mathrm {ch} . The device with \textt\mathrm {ch} = 15 nm displayed a value of \mu \textit {n\_{}$eff}} = 2,190$ cm2/V-s at room temperature. This valuewas found to decrease as \text{t}_{\mathrm {ch}} was scaled down. [ABSTRACT FROM PUBLISHER]