Electrical Properties of Dilute Nitride GaAsPN/GaPN MQW p- i- n Diode.

In this study, the electrical properties of dilute nitride GaAsPN/GaPN multi-quantum well p- i- n diodes were investigated by using current-voltage ( I- V) measurements at room temperature. The diode structure was grown on silicon (Si) (100) substrate misoriented by 4° towards the [110] direction using the molecular beam epitaxy technique, and ohmic contacts were formed on this structure by metallization process. The forward bias I- V characteristics of the diode were analyzed by the thermionic emission theory. Ideality factor ( n), barrier height (Φ) and series resistance ( R ), which are the main electrical parameters of diodes, were determined from I- V characteristic, Norde and Cheung methods. The obtained experimental results were compared with each other. From the I- V characteristic, the values of n and Φ were found to be 2.86 eV and 0.69 eV, respectively. The barrier height values, which were obtained from the Norde function and I- V characteristic, were in good agreement with each other. It was also found that the values of series resistance determined from the Norde and Cheung functions were compatible with each other. [ABSTRACT FROM AUTHOR]