High-performance p-channel thin-film transistors with lightly doped n-type excimer-laser-crystallized germanium films.

MLA

Chan-Yu Liao, et al. “High-Performance p-Channel Thin-Film Transistors with Lightly Doped n-Type Excimer-Laser-Crystallized Germanium Films.” Japanese Journal of Applied Physics, vol. 56, no. 6S1, June 2017, p. 1. EBSCOhost, https://doi.org/10.7567/JJAP.56.06GF08.

APA

Chan-Yu Liao, Ching-Yu Huang, Ming-Hui Huang, Wen-Hsien Huang, Chang-Hong Shen, Jia-Min Shieh, & Huang-Chung Cheng. (2017). High-performance p-channel thin-film transistors with lightly doped n-type excimer-laser-crystallized germanium films. Japanese Journal of Applied Physics, 56(6S1), 1. https://doi.org/10.7567/JJAP.56.06GF08

Chicago

Chan-Yu Liao, Ching-Yu Huang, Ming-Hui Huang, Wen-Hsien Huang, Chang-Hong Shen, Jia-Min Shieh, and Huang-Chung Cheng. 2017. “High-Performance p-Channel Thin-Film Transistors with Lightly Doped n-Type Excimer-Laser-Crystallized Germanium Films.” Japanese Journal of Applied Physics 56 (6S1): 1. doi:10.7567/JJAP.56.06GF08.