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P-6: The Effects of Buffer Layers on the Electrical Characteristics and Stability of Self-Aligned Top-Gate IGZO Thin Film Transistors.

Authors :
Ho, Yi-Da
Yang, Yu-Xin
Yang, Ching-Fei
Li, Hung-Wei
Tsai, Chih-Hung
Lu, Hsueh-Hsing
Lin, Yu-Hsin
Source :
SID Symposium Digest of Technical Papers; May2017, Vol. 48 Issue 1, p1246-1249, 4p
Publication Year :
2017

Abstract

The composition of buffer layer would be played a key role to affect the electrical performance and the reliability of the self-aligned top-gate a-IGZO TFTs. In this work, the threshold voltage shift (ΔVth) of the device could be less than ±1V under positive and negative bias thermal illumination stress. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
0097966X
Volume :
48
Issue :
1
Database :
Complementary Index
Journal :
SID Symposium Digest of Technical Papers
Publication Type :
Academic Journal
Accession number :
123395341
Full Text :
https://doi.org/10.1002/sdtp.11878