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P-6: The Effects of Buffer Layers on the Electrical Characteristics and Stability of Self-Aligned Top-Gate IGZO Thin Film Transistors.
- Source :
- SID Symposium Digest of Technical Papers; May2017, Vol. 48 Issue 1, p1246-1249, 4p
- Publication Year :
- 2017
-
Abstract
- The composition of buffer layer would be played a key role to affect the electrical performance and the reliability of the self-aligned top-gate a-IGZO TFTs. In this work, the threshold voltage shift (ΔVth) of the device could be less than ±1V under positive and negative bias thermal illumination stress. [ABSTRACT FROM AUTHOR]
- Subjects :
- THIN film transistors
INDIUM gallium zinc oxide
GATE array circuits
Subjects
Details
- Language :
- English
- ISSN :
- 0097966X
- Volume :
- 48
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- SID Symposium Digest of Technical Papers
- Publication Type :
- Academic Journal
- Accession number :
- 123395341
- Full Text :
- https://doi.org/10.1002/sdtp.11878