Formation Of Nanocrystalline SiGe In Polycrystalline-Ge/Si Thin Film Without Any Metal Induced Crystallization.

The formation of nanocrystalline SiGe without the aid of metal induced crystallization is reported. Recrystallization of the as-deposited poly-Ge film (deposited at 450 °C) leads to development of regions with depleted Ge concentration upon annealing at 500 °C. Clusters with crystalline facet containing both nanocrystalline SiGe and crystalline Ge phase starts appearing at 600 °C. The structural phase characteristics were investigated by X-ray diffraction (XRD) and Raman spectroscopy. The stoichiometry of the SiGe phase was estimated from the positions of the Raman spectral peaks. [ABSTRACT FROM AUTHOR]