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MOCVD growth of GaN on SEMI-spec 200 mm Si.
- Source :
- Semiconductor Science & Technology; Jun2017, Vol. 32 Issue 6, p1-1, 1p
- Publication Year :
- 2017
-
Abstract
- We describe the results produced from our research on integrating GaN devices with Si CMOS integrated circuits. High quality, low bow and robust 200 mm GaN on SEMI-spec epitaxial Si (725 μm) wafers are achieved by using a unique shaped susceptor and careful control of buffer design. High brightness InGaN/GaN MQW LEDs emitting at 450 nm with total III-N stack thickness of 3.6 μm have also been demonstrated. The growth technology of GaN on SEMI-spec 200 mm leads to new wafer/device platforms such as GaN-OI and CMOS + GaN that will open new avenues in device performance and integration of III-N devices with Si CMOS. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 32
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 123164881
- Full Text :
- https://doi.org/10.1088/1361-6641/aa681c