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High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications.
- Source :
- IEEE Electron Device Letters; May2017, Vol. 38 Issue 5, p615-618, 4p
- Publication Year :
- 2017
-
Abstract
- In this letter, we have proposed a novel AlGaN/GaN FinFET featuring T-shaped gate and extremely linearity of transconductance characteristics ( \textG\mathrm {m}) . The formation of AlGaN/GaN nano-fins only in the gate opening region is enabled by a developed fabrication process, which is simple and well compatible with the conventional one. When normalized to effective channel width, the fabricated FinFET delivers a 1.45 times higher current density and a 1.66 times higher output power density as high as 11.3 W/mm at 8 GHz compared with the planar HEMTs, along with clearly improved linearity characteristics thanks to a flatter \textG\mathrm {m} response afforded by much lower source access resistance. To the best of our knowledge, this is the first demonstration of superior power performance of high-linearity GaN FinFETs, indicating significant advantages of tri-gate configuration over planar HEMTs for microwave power applications. [ABSTRACT FROM AUTHOR]
- Subjects :
- FIELD-effect transistors
ALUMINUM gallium nitride
MICROWAVES
Subjects
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 38
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 122813779
- Full Text :
- https://doi.org/10.1109/LED.2017.2687440