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A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: µW emission power at 1.5 µm.
- Source :
- Journal of Applied Physics; 2017, Vol. 121 Issue 11, p1-9, 9p, 2 Charts, 5 Graphs
- Publication Year :
- 2017
-
Abstract
- This article describes the development of an Si-based light-emitting diode with β-FeSi<subscript>2</subscript> nanocrystals embedded in the active layer. Favorable epitaxial conditions allow us to obtain a direct band gap type-I band alignment Si/β-FeSi<subscript>2</subscript> nanocrystals/Si heterostructure with optical transition at a wavelength range of 1500-1550 nm at room temperature. Transmission electron microscopy data reveal strained, defect-free β-FeSi<subscript>2</subscript> nanocrystals of diameter 6 and 25 nm embedded in the Si matrix. Intense electroluminescence was observed at a pumping current density as low as 0.7A/cm². The device reached an optical emission power of up to 25 µW at 9A/cm² with an external quantum efficiency of 0.009%. Watt-Ampere characteristic linearity suggests that the optical power margin of the light-emitting diode has not been exhausted. Band structure calculations explain the luminescence as being mainly due to radiative recombination in the large β-FeSi<subscript>2</subscript> nanocrystals resulting from the realization of an indirect-to-direct band gap electronic configuration transformation arising from a favorable deformation of nanocrystals. The direct band gap structure and the measured short decay time of the luminescence of several tens of ns give rise to a fast operation speed for the device. Thus a method for developing a silicon-based photonic integrated circuit, combining complementary metal-oxide-semiconductor technology functionality and near-infrared light emission, is reported here. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 121
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 122026045
- Full Text :
- https://doi.org/10.1063/1.4978372