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Combined Effects of Total Ionizing Dose and Temperature on a K-Band Quadrature LC-Tank VCO in a 32 nm CMOS SOI Technology.
- Source :
- IEEE Transactions on Nuclear Science; Jan2017, Vol. 64 Issue 1, part 1, p204-211, 8p
- Publication Year :
- 2017
-
Abstract
- A 20.4 GHz VCO with a tuning range of 610 MHz (3%) was designed and fabricated in a 32 nm CMOS silicon-on-insulator technology. At 36 °C, the VCO achieves an output power of 0.1 dBm and a phase noise of −99 dBc/Hz at 1 MHz offset from the center frequency. TID experiments on the VCO operating at 36 °C, 75 °C, and 100 °C show degradation in frequency, output power, and phase noise. At 100 °C and 500 krad(SiO2), the VCO shows a worst-case degradation of 630 MHz, 4.3 dBm, and 6.1 dBc/Hz in center frequency, output power, and phase noise, respectively. At 36 °C and up to 500 krad(SiO2), the VCO can be retuned to operate at the required center frequency of 20.4 GHz. However, at 100 °C, the combined effects of temperature and TID result in specification failure. The system-level impact of TID-induced degradation on VCO performance is discussed using a phase-locked loop (PLL) as an example application. Measured performance corroborates previous predictions and highlights the importance of combined effects testing for advanced RF design characterization and qualification. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 64
- Issue :
- 1, part 1
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 121745591
- Full Text :
- https://doi.org/10.1109/TNS.2016.2637699