Study of transport phenomenon in ternary alloys AlGaN, InGaN and InGaN.

Recent advances in growth and understanding of the physics of III-nitride semiconductor caused a vertiginous expansion of their field of applications. These materials are very useful for the application of ternary and quaternary alloys. They offer a wide variety of compositions to vary their electronic properties. Also, they are of great importance especially in the fields of optoelectronics where they find a very wide scope, since they are commonly used in green LEDs, blue and ultraviolet as well as laser diodes and ultraviolet detectors. In this work, we are interested in the study of transport phenomena in ternary alloys nitride, particularly AlGaN, InGaN and AlGaN, using the Monte Carlo simulation method. [ABSTRACT FROM AUTHOR]