Potential induced degradation of n-type crystalline silicon solar cells with p+ front junction.

N-type silicon-based solar cells are currently being used for achieving high efficiency. However, most of the photovoltaic modules already constructed are based on p-type silicon solar cells, and there are few studies on potential induced degradation ( PID) in n-type solar cells. In this study, we investigated PID in n-type silicon solar cells with a front p+ emitter. Further, the PID characteristics of n-type solar cells are compared with those of p-type solar cells. The electrical properties of PID in solar cells are observed with the light I-V, quantum efficiency ( QE), and electroluminescence ( EL). The possible causes for the change in the external quantum efficiency ( EQE) after PID are interpreted using PC1D and are discussed by comparing the experimental results with the simulation results. [ABSTRACT FROM AUTHOR]