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Self-Assembled Monolayer Dielectrics for Low-Voltage Carbon Nanotube Transistors with Controlled Network Density.
- Source :
- Advanced Materials Interfaces; Sep2016, Vol. 3 Issue 18, pn/a-n/a, 8p
- Publication Year :
- 2016
-
Abstract
- Control of the density and uniformity of semiconducting single-walled carbon nanotube (SWNT) networks is crucial for their application in field-effect transistors (FETs) and critically depends on the surface of the substrate. Here, the concept of self-assembled monolayer (SAM) dielectrics on aluminum/aluminum oxide bottom-gate electrodes is used to create low-voltage (<2 V) FETs with SWNT networks. The influence of different phosphonic acid SAMs is investigated on the final network density and charge transport properties of solution-deposited, polyfluorene-sorted large-diameter semiconducting SWNT. Positively charged, imidazolium-terminated SAMs and those with high dipole moments result in the highest network densities for both spin-coating and dip-coating. However, FETs with moderate SWNT coverage on SAMs with long alkyl chains and amine or hydroxyl end-groups yield the best combination of high on-conductances and high hole mobilities (up to 20 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript>) with low trap densities and short critical channel lengths (<2 μm). These parameters are suitable for future short channel, flexible, and high-frequency FETs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21967350
- Volume :
- 3
- Issue :
- 18
- Database :
- Complementary Index
- Journal :
- Advanced Materials Interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 121031202
- Full Text :
- https://doi.org/10.1002/admi.201600215