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A Novel Operation Scheme Enabling Easy Integration of Selector and Memory.
- Source :
- IEEE Electron Device Letters; Feb2017, Vol. 38 Issue 2, p172-174, 3p
- Publication Year :
- 2017
-
Abstract
- In this letter, by utilizing the unique property of large hysteresis of threshold selector, a novel operation scheme is proposed to not only lower the voltages and power, but also remove the voltage matching constrains between resistive memory (RRAM) and selector. This makes threshold selector suitable for most of RRAM integration. [ABSTRACT FROM PUBLISHER]
- Subjects :
- NONVOLATILE random-access memory
HYSTERESIS
ELECTRIC potential
Subjects
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 38
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 121012861
- Full Text :
- https://doi.org/10.1109/LED.2016.2641018