Effect of Screw-Dislocation on Electrical Properties of Spiral-Type Bi2Se3 Nanoplates.

We systematically investigated the electrical properties of spiral-type and smooth Bi₂Se₃ nanoplates through field effect transistor and conductive atomic force microscopy (CAFM) measurement. It is observed that both nanoplates possess high conductivity and show metallic-like behavior. Compared to the smooth nanoplate, the spiral-type one exhibits the higher carrier concentration and lower mobility. CAFM characterization reveals that the conductance at the screw-dislocation edge is even higher than that on the terrace, implying that the dislocation can supply excess carriers to compensate the low mobility and achieve high conductivity. The unique structure and electrical properties make the spiral-type Bi₂Se₃ nanoplates a good candidate for catalysts and gas sensors. [ABSTRACT FROM AUTHOR]