Magnetic anisotropy induced in the nanocrystalline FeZrN films prepared by oblique-angle magnetron sputtering.

Nanocrystalline FeZrN films are prepared by oblique-angle magnetron sputtering. The effect of the ion beam angle and subsequent annealing on the phase and structural states, the coercive force, the saturation magnetization, the remanent magnetization, and the induced in-plane magnetic anisotropy field has been studied. The possibility of natural ferromagnetic resonance in these films at gigahertz frequencies is estimated. [ABSTRACT FROM AUTHOR]