Interface Influence on the Long-Wave Auger Suppressed Multilayer N+ $\pi$ P+p+n+ HgCdTe HOT Detector Performance.

This paper reports on N+- $\pi $ interface influence on the performance: dark current and response time of multilayer long-wave infrared mercury cadmium telluride (MCT - HgCdTe) N+ \pi$ P+p+n+ detector under high operating temperature conditions, T = 230$ K. A detailed analysis of the dark current and response time as a function of device architecture, i.e., N+- \pi at T = 230$ K was reduced from \approx ~62$ to 12 A/cm , while response time could be reduced to $\approx ~52$ ps for low-voltage operation, $V = 200$ mV. [ABSTRACT FROM PUBLISHER]