Back to Search
Start Over
Abnormal hump in capacitance-voltage measurements induced by ultraviolet light in a-IGZO thin-film transistors.
- Source :
- Applied Physics Letters; 1/9/2017, Vol. 110 Issue 2, p1-4, 4p, 1 Diagram, 5 Graphs
- Publication Year :
- 2017
-
Abstract
- This work demonstrates the generation of abnormal capacitance for amorphous indium-galliumzinc oxide (a-InGaZnO<subscript>4</subscript>) thin-film transistors after being subjected to negative bias stress under ultraviolet light illumination stress (NBIS). At various operation frequencies, there are two-step tendencies in their capacitance-voltage curves. When gate bias is smaller than threshold voltage, the measured capacitance is dominated by interface defects. Conversely, the measured capacitance is dominated by oxygen vacancies when gate bias is larger than threshold voltage. The impact of these interface defects and oxygen vacancies on capacitance-voltage curves is verified by TCAD simulation software. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 110
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 120707480
- Full Text :
- https://doi.org/10.1063/1.4973856