MOCVD growth of lattice-matched and mismatched InGaAs materials for thermophotovoltaic energy conversion.

Authors :: Murray, Susan L.
Newman, Frederick D.
Murray, Christopher S.
Wilt, David M.
Wanlass, Mark W.
Ahrenkiel, Phil
Messham, Rowan
Siergiej, Richard R.
Source :: Semiconductor Science & Technology; May2003, Vol. 18 Issue 5, pS202-S208, 7p
Publication Year :: 2003
Abstract: The details of MOCVD growth of lattice-matched (0.74 eV) and lattice-mismatched (0.55 eV and 0.6 eV) InGaAs-based thermophotovoltaic (TPV) devices on InP substrates are discussed. The optimization of growth conditions, structural parameters and run-to-run consistency have played a key role in the development of high quality TPV devices, particularly in the development of lattice-mismatched materials. [ABSTRACT FROM AUTHOR]

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