Adhesion Strength Study of Sintered Silver for Power Electronic Devices Application.

Sintered Nano-silver (Ag) provides an alternative to current solder material due to its excellent thermal and electrical properties. It has been widely perused in power electronic devices as an interface between substrate and chip to enhance the device performance. This paper also discusses the relationship between porosity and adhesion strength of Ag material for power semiconductor device applications. Two best candidates of material have been selected based on thermal conductivity (> 80 W/mK) and electrical resistivity (< 10-6 Ocm). Material A possess 16% porosity in average when it cured at 250°C for 60 minutes. While for material B shown 22% porosity at the same curing condition. Shear strength test has been performed for this selected materials. Average of 19.7 kg at 25°C and 19.8 kg at 260°C for material A and 15.9 kg at 25°C and 14.9 kg at 260°C for material B were observed in this test. The results show that material A possess higher adhesion strength compared with material B. However, micro-crack on the material surface was observed for material A. [ABSTRACT FROM AUTHOR]