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Two-carrier transport-induced extremely large magnetoresistance in high mobility Sb2Se3.
- Source :
- Journal of Applied Physics; 2017, Vol. 121 Issue 1, p1-5, 5p, 1 Chart, 7 Graphs
- Publication Year :
- 2017
-
Abstract
- Large magnetoresistance (MR) has been widely reported in the A<subscript>2</subscript>B<subscript>3</subscript> (A=Sb or Bi; B=Se or Te) family of topological insulators (TIs). Sb<subscript>2</subscript>Se<subscript>3</subscript>is not a TI that was confirmed by the extracted zero Berry phase and the X-ray diffraction. An extremely large MR was observed in the Sb<subscript>2</subscript>Se<subscript>3</subscript> crystals. This large MR increased quadratically with the magnetic field applied. The observed MR ratio was 830% at 10K and 9 T, which was larger than that previously reported for all A<subscript>2</subscript>B<subscript>3</subscript> family TIs. This large MR originated from two carriers with high mobility. The inversely square root of the MR ratio was proportional to the resistance. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 121
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 120587932
- Full Text :
- https://doi.org/10.1063/1.4973343