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Two-carrier transport-induced extremely large magnetoresistance in high mobility Sb2Se3.

Authors :
Shiu-Ming Huang
Shih-Hsun Yu
Mitch Chou
Source :
Journal of Applied Physics; 2017, Vol. 121 Issue 1, p1-5, 5p, 1 Chart, 7 Graphs
Publication Year :
2017

Abstract

Large magnetoresistance (MR) has been widely reported in the A<subscript>2</subscript>B<subscript>3</subscript> (A=Sb or Bi; B=Se or Te) family of topological insulators (TIs). Sb<subscript>2</subscript>Se<subscript>3</subscript>is not a TI that was confirmed by the extracted zero Berry phase and the X-ray diffraction. An extremely large MR was observed in the Sb<subscript>2</subscript>Se<subscript>3</subscript> crystals. This large MR increased quadratically with the magnetic field applied. The observed MR ratio was 830% at 10K and 9 T, which was larger than that previously reported for all A<subscript>2</subscript>B<subscript>3</subscript> family TIs. This large MR originated from two carriers with high mobility. The inversely square root of the MR ratio was proportional to the resistance. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
121
Issue :
1
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
120587932
Full Text :
https://doi.org/10.1063/1.4973343