High-Power Single-Mode 1.3-μm Lasers Based on InAs/AlGaAs/GaAs Quantum Dot Heterostructures.

Authors :: Livshits, D.A.
Kovsh, A.R.
Zhukov, A.E.
Maleev, N.A.
Mikhrin, S.S.
Vasil'ev, A.P.
Nikitina, E.V.
Ustinov, V.M.
Ledentsov, N.N.
Lin, G.
Chi, J.
Source :: Technical Physics Letters; Jan2004, Vol. 30 Issue 1, p9-11, 3p
Publication Year :: 2004
Abstract: Single-mode lasers operating in the 1.3μm wavelength range have been obtained with the active region based on InAs/AlGaAs/GaAs quantum dot heterostructures. A minimum threshold current of about 1.4 mA is reached, which is a record value for ridge waveguide lasers. The maximum efficiency and maximum output power in the cw lasing mode are 0.73 W/A and 120 mW, respectively. © 2004 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR]

Subjects :: SEMICONDUCTOR lasers
QUANTUM dots
HETEROSTRUCTURES
INDIUM arsenide
ALUMINUM compounds
GALLIUM arsenide

Full Text Access

Tools