Hybrid small-signal π-model for the lateral NQS effect in SiGe HBTs.

Details

Language :

English

ISBNs :

9781509004843

Database :

Complementary Index

Journal :

2016 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM)

Publication Type :

Conference

Accession number :

120197804

Full Text :

https://doi.org/10.1109/BCTM.2016.7738964