Theoretical study of selenium and tellurium impurities in (ZnO)6 clusters using DFT and TDDFT.

Zinc oxide (ZnO) nanostructures have attracted much interest due to their potential applications in various fields including optoelectronics, glass industries, and solar cells. These compounds hold the promise of creating new materials that can advance energy technologies. In this work, a series of (ZnO)₆ clusters with selenium and tellurium applied as substitutional impurities has been studied. The investigated structures have been produced through the doping of (ZnO)₆ clusters by replacing an oxygen atom with a selenium or a tellurium atom at each time. The ground state geometric parameters of (ZnO)₆ structures, containing selenium or tellurium atoms as substitutional impurities, were calculated using density functional theory (DFT) with B3LYP and LanL2DZ basis set. Excited state energies and absorption wavelengths were computed using time-dependent-DFT (TDDFT). For the calculation of emission wavelengths, Hartree-Fock configuration interaction singles (HF/CIS) has been used in order to perform the excited state geometry optimization. This work led to some important results that can be helpful for developing novel THz sensitive materials and imaging detectors that may be an alternative to x-rays detectors for radiology as well as for the development of solar cells and electroluminescent diodes. Zinc oxide (ZnO) nanostructures have attracted growing interest due to their potential applications in many technological fields, including optoelectronics, the glass industry, and energy. The presence of impurities, in particular selenium and tellurium, in ZnO-based clusters can affect their structural and spectroscopic properties. Some of these doped nanostructures have favorable Terahertz emission characteristics that make them good candidates for applications in biology and medicine. [ABSTRACT FROM AUTHOR]