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The influence of interfacial tensile strain on the charge transport characteristics of MoS2-based vertical heterojunction devices.
- Source :
- Nanoscale; 10/28/2016, Vol. 8 Issue 40, p17598-17607, 10p
- Publication Year :
- 2016
Details
- Language :
- English
- ISSN :
- 20403364
- Volume :
- 8
- Issue :
- 40
- Database :
- Complementary Index
- Journal :
- Nanoscale
- Publication Type :
- Academic Journal
- Accession number :
- 118840358
- Full Text :
- https://doi.org/10.1039/c6nr05937f