Oxide stoichiometry-controlled TaOx-based resistive switching behaviors.

We examine the influence of variable oxygen concentration in TaO_x active layers on the forming process and bipolar resistive switching (BRS) features of TaO_x-based resistive switching cells. TaO_x active layers prepared using various rf sputtering powers were systematically analyzed to identify the relation between initial compositions and BRS behavior. Proper control of oxygen vacancy concentration was clearly identified as a basic factor in ensuring typical BRS features without affecting the structural properties. We describe the possible origins of both conduction and switching based on the variation of oxygen concentrations initially provided by the growth conditions. [ABSTRACT FROM AUTHOR]