An ultralow-capacitance bidirectional punch-through transient voltage suppressor.

A bidirectional punch-through transient voltage suppressor based on a five-layer N⁺⁺P⁺PP⁺N⁺⁺ structure is developed. By realizing the device using a 12-finger layout, transmission line pulse measurements indicate that the device has met the IEC61000-4-2 standard with electrostatic discharge robustness of ±8 kV and has an ultralow capacitance value of less than 0.17 pF. Under 3.3 V forward or reverse bias, the device exhibits a leakage current of less than 2 nA. These excellent figures suggest that the developed structure is well suited for actual system-level protection applications. © 2016 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc. [ABSTRACT FROM AUTHOR]