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Magnetoresistive Random Access Memory.
- Source :
- Proceedings of the IEEE; Oct2016, Vol. 104 Issue 10, p1796-1830, 35p
- Publication Year :
- 2016
-
Abstract
- In this paper, a review of the developments in MRAM technology over the past 20 years is presented. The various MRAM generations are described with a particular focus on spin-transfer torque MRAM (STT-MRAM) which is currently receiving the greatest attention. The working principles of these various MRAM generations, the status of their developments, and demonstrations of working circuits, including already commercialized MRAM products, are discussed. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189219
- Volume :
- 104
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Proceedings of the IEEE
- Publication Type :
- Academic Journal
- Accession number :
- 118352502
- Full Text :
- https://doi.org/10.1109/JPROC.2016.2590142