Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass.

MLA

Kikuchi, Y., et al. “Electrical Characteristics of P-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-Nm Phosphosilicate Glass.” IEEE Electron Device Letters, vol. 37, no. 9, Sept. 2016, pp. 1084–87. EBSCOhost, https://doi.org/10.1109/LED.2016.2589661.

APA

Kikuchi, Y., Chiarella, T., De Roest, D., Blanquart, T., De Keersgieter, A., Kenis, K., Peter, A., Ong, P., Van Besien, E., Tao, Z., Kim, M. S., Kubicek, S., Chew, S. A., Schram, T., Demuynck, S., Mocuta, A., Mocuta, D., & Horiguchi, N. (2016). Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass. IEEE Electron Device Letters, 37(9), 1084–1087. https://doi.org/10.1109/LED.2016.2589661

Chicago

Kikuchi, Y., T. Chiarella, D. De Roest, T. Blanquart, A. De Keersgieter, K. Kenis, A. Peter, et al. 2016. “Electrical Characteristics of P-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-Nm Phosphosilicate Glass.” IEEE Electron Device Letters 37 (9): 1084–87. doi:10.1109/LED.2016.2589661.