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Silicon micro-cantilever chemical sensors fabricated in double-layer silicon-on-insulator (SOI) wafer.
- Source :
- Microsystem Technologies; Aug2016, Vol. 22 Issue 8, p1959-1965, 7p
- Publication Year :
- 2016
-
Abstract
- Micro-cantilever piezoresistive sensors are optimally designed and fabricated in a double-layer silicon-on-insulator (SOI) wafer. The sensor geometry is optimized by placing the sensing piezoresistor at the cantilever root region to increase effective piezoreisistive sensing area. According to finite-element simulation results, high sensitivity can be obtained by design the cantilever into a wide and short shape. In order to use single-crystalling silicon to fabricate both the cantilever and the piezoresistor for high sensitivity, double-layer SOI wafer, which has two active layers and two insulating layers, is proposed to fabricate the self-sensing micro-cantilever sensor. The piezoresistor is made of the top active-layer single-crystalline silicon. Without p-n junction isolation, such a piezoresistor can be free from leakage-current relative noise that helps to achieve fine sensing resolution. The bottom active-layer is used to form the cantilever, with well controlled cantilever thickness and high fabrication yield. With the top surface of the micro-cantilever is modified with the functionalized self-assembled monolayer, detection of trace-concentration Trinitrotoluene (TNT) vapor is experimentally carried out, with reproducible sensing response to 7.6 ppb TNT. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09467076
- Volume :
- 22
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Microsystem Technologies
- Publication Type :
- Academic Journal
- Accession number :
- 117358006
- Full Text :
- https://doi.org/10.1007/s00542-015-2480-0