High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films.

MLA

Matys, M., et al. “High-Temperature Ultraviolet Detection Based on Surface Photovoltage Effect in SiN Passivated n-GaN Films.” Applied Physics Letters, vol. 109, no. 5, Aug. 2016, pp. 051106-1-051106-4. EBSCOhost, https://doi.org/10.1063/1.4960484.

APA

Matys, M., Adamowicz, B., Zytkiewicz, Z. R., Taube, A., Kruszka, R., & Piotrowska, A. (2016). High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films. Applied Physics Letters, 109(5), 051106-1-051106-4. https://doi.org/10.1063/1.4960484

Chicago

Matys, M., B. Adamowicz, Z. R. Zytkiewicz, A. Taube, R. Kruszka, and A. Piotrowska. 2016. “High-Temperature Ultraviolet Detection Based on Surface Photovoltage Effect in SiN Passivated n-GaN Films.” Applied Physics Letters 109 (5): 051106-1-051106-4. doi:10.1063/1.4960484.