Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced $I$ – $V$ Characteristic for Switching Applications.

Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width ( W\mathrm{ fin} ) of 120 nm, a fin height ( H\mathrm{ fin}) of 250 nm, and a gate length ( LG ) of 200 nm. The proposed device achieved very low drain leakage ( I\mathrm{ off}) < 8 \times 10^{-8} A/mm at 7 V and < 1 \times 10^-6 A/mm at 100 V, which is four orders of improvement over I\mathrm{\scriptscriptstyle OFF} of conventional Al(In)N/GaN HEMTs. In addition, the device exhibits a high ON-state current ( I\mathrm{\scriptscriptstyle ON}) of 1.12 A/mm, a steep sub-threshold swing ( $S$ ) of 63 mV/decade, a low drain-induced barrier lowering of 18.5 mV/V, and a high power-gain cutoff frequency ( f_{T} ) of 21 GHz. [ABSTRACT FROM PUBLISHER]